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| trenchfet power mosfets: 1.8-v rated new powerpak package ? low-thermal resistance, r thjc ? low 1.07-mm profile 3000-v esd protection protection switch for 1-2 li-ion batteries SI7900EDN vishay siliconix new product document number: 71425 s-03369?rev. a, 02-apr-01 www.vishay.com 1 dual n-channel 20-v (d-s) mosfet, common drain v ds (v) r ds(on) ( ) i d (a) 0.026 @ v gs = 4.5 v 9 20 0.031 @ v gs = 2.5 v 8 0.039 @ v gs = 1.8 v 7 d g 1 s 1 d g 2 s 2 n-channel n-channel 2.4 k 2.4 k 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d d d d 3.30 mm 3.30 mm powerpak 1212-8 bottom view parameter symbol 10 secs steady state unit drain-source voltage v ds 20 gate-source voltage v gs 12 v t a = 25 c 9 6 continuous drain current (t j = 150 c) a t a = 85 c i d 6.4 4.3 pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 2.9 1.4 t a = 25 c 3.2 1.5 maximum power dissipation a t a = 85 c p d 1.7 0.79 w operating junction and storage temperature range t j , t stg ?55 to 150 c parameter symbol typical maximum unit t 10 sec 30 38 maximum junction-to-ambient a steady state r thja 65 82 c/w maximum junction-to-case steady state r thjc 1.9 2.4 c/w notes a. surface mounted on 1? x 1? fr4 board. SI7900EDN vishay siliconix new product www.vishay.com 2 document number: 71425 s-03369 ? rev. a, 02-apr-01 parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 0.40 v v ds = 0 v, v gs = 4.5 v 1 a gate-body leakage i gss v ds = 0 v, v gs = 12 v 10 ma v ds = 16 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 16 v, v gs = 0 v, t j = 85 c 20 a on-state drain current a i d(on) v ds = 5 v, v gs = 4.5 v 20 a v gs = 4.5 v, i d = 6.5 a 0.021 0.026 drain-source on-state resistance a r ds(on) v gs = 2.5 v, i d = 5.8 a 0.025 0.031 ds(on) v gs = 1.8 v, i d = 5.0 a 0.031 0.039 forward transconductance a g fs v ds = 10 v, i d = 6.5 a 25 s diode forward voltage a v sd i s = 1.5 a, v gs = 0 v 0.65 1.1 v dynamic b total gate charge q g 12.5 18 gate-source charge q gs v ds = 10 v, v gs = 4.5 v, i d = 6.5 a 2.7 nc gate-drain charge q gd 2.7 turn-on delay time t d(on) 0.7 1.0 rise time t r v dd = 10 v, r l = 10 1.3 2.0 turn-off delay time t d(off) v dd = 10 v, r l = 10 i d 1 a, v gen = 4.5 v, r g = 6 5.5 8.0 s fall time t f 4.6 7.0 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. 0.01 100 10,000 gate current vs. gate-source voltage 0 3 6 9 12 15 18 gate-current vs. gate-source voltage v gs ? gate-to-source voltage (v) 0.1 1 10 1,000 v gs ? gate-to-source voltage (v) ? gate current ( i gss a) 15 0 36912 t j = 25 c t j = 150 c ? gate current (ma) i gss 8 6 4 2 0 SI7900EDN vishay siliconix new product document number: 71425 s-03369 ? rev. a, 02-apr-01 www.vishay.com 3 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0 6 12 18 24 30 0 6 12 18 24 30 024681012 0 1 2 3 4 5 0 3 6 9 12 15 0.6 0.8 1.0 1.2 1.4 1.6 1.8 ? 50 ? 25 0 25 50 75 100 125 150 0 500 1000 1500 2000 2500 048121620 v gs = 5 thru 2 v 25 c t c = ? 55 c c rss c oss c iss v ds = 10 v i d = 9 a v gs = 4.5 v i d = 9 a v gs = 4.5 v v gs = 2.5 v 125 c 1.5 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) (normalized) ? on-resistance ( r ds(on) ) v gs = 1.8 v SI7900EDN vishay siliconix new product www.vishay.com 4 document number: 71425 s-03369 ? rev. a, 02-apr-01 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.02 0.04 0.06 0.08 0123456 1 10 20 i d = 9 a 0 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold voltage variance (v) v gs(th) t j ? temperature ( c) source-drain diode forward voltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s 0 20 80 power (w) single pulse power, junction-to-ambient time (sec) 40 60 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 65 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.1 10 1 0.01 0.001 SI7900EDN vishay siliconix new product document number: 71425 s-03369 ? rev. a, 02-apr-01 www.vishay.com 5 0.0001 0.001 0.1 1 0.01 0.00001 2 1 0.1 0.01 0.2 0.1 0.05 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) normalized effective transient thermal impedance 0.02 |
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